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MRFG35003N6AT1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor

MRFG35003N6AT1_5016138.PDF Datasheet


 Full text search : Gallium Arsenide PHEMT RF Power Field Effect Transistor


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MRFG35003M6T1 MRFG35003M6T1 3.5 GHz, 3 W, 6 V Power FET GaAs PHEMT
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IXYS[IXYS Corporation]
DGS9-03AS DGS10-03A Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
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IXYS[IXYS Corporation]
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From old datasheet system
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ON Semi
ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- 300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
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KPC3023 KPC3020 KPC3021 KPC3022 (KPC3020 - KPC3023) Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)
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Kondenshi Corp
KODENSHI[KODENSHI KOREA CORP.]
KODENSHI, CORP.
WP710A10YD5V The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
Kingbright Corporation
DGSK40-025CS DGS19-025CS 31 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB PLASTIC PACKAGE-4
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IXYS, Corp.
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Panasonic
 
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